PART |
Description |
Maker |
BUK7K5R6-30E |
Dual N-channel 30 V, 5.6 mstandard level MOSFET
|
NXP Semiconductors
|
PSMN2R6-40YS |
N-channel LFPAK 40 V 2.8 mstandard level MOSFET
|
NXP Semiconductors
|
PSMN5R6-100XS |
N-channel 100V 5.6 mstandard level MOSFET in TO220F (SOT186A)
|
NXP Semiconductors
|
PSMN3R9-60PS |
N-channel 60 V, 3.9 mstandard level MOSFET in SOT78 N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
|
NXP Semiconductors
|
PPF5210M |
P Channel MOSFET; Package: TO-254; ID (A): 19; RDS(on) (Ohms): 0.07; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 30 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
PSMN5R0-100PS |
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 120 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
SI4982DY SI4982DY-T1 |
2.6 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET Dual N-Channel 100-V (D-S) MOSFET Dual N-Channel, 100-V, (D-S) Rated MOSFET
|
VISHAY INTERTECHNOLOGY INC VISAY[Vishay Siliconix]
|
FDT86113LZ |
100V N-Channel PowerTrenchMOSFET N-Channel PowerTrench? MOSFET 100 V, 3.3 A, 100 m N-Channel PowerTrench? MOSFET 100 V, 3.3 A, 100 m
|
Fairchild Semiconductor
|
PPF75N10N |
N Channel MOSFET; Package: TO-258; ID (A): 50; RDS(on) (Ohms): 0.025; PD (W): 300; BVDSS (V): 100; Rq: 0.42; 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
|
Microsemi, Corp.
|
SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
|